composite transistors 1 publication date: february 2004 sjj00151bed xp01601 (XP1601) silicon pnp epitaxial planar type (tr1) silicon npn epitaxial planar type (tr2) for general amplification features ? two elements incorporated into one package (emitter-coupled transistors) ? reduction of the mounting area and assembly cost by one half basic part number ? 2sb0709a (2sb709a) + 2sd0601a (2sd601a) absolute maximum ratings t a = 25 c marking symbol: 7s internal connection tr2 tr1 123 4 5 note) the part number in the parenthesis shows conventional part number. parameter symbol rating unit tr1 collector-base voltage v cbo ? 60 v (emitter open) collector-emitter voltage v ceo ? 50 v (base open) emitter-base voltage v ebo ? 7v (collector open) collector current i c ? 100 ma peak collector current i cp ? 200 ma tr2 collector-base voltage v cbo 60 v (emitter open) collector-emitter voltage v ceo 50 v (base open) emitter-base voltage v ebo 7v (collector open) collector current i c 100 ma peak collector current i cp 200 ma overall total power dissipation p t 150 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c unit: mm 1: base (tr1) 4: collector (tr2) 2: emitter 5: collector (tr1) 3: base (tr2) eiaj: sc-88a smini5-g1 package 2.1 0.1 0.9 +0.2 ?0.1 0.9 0.1 0 to 0.1 1.25 0.10 1 3 2 0.20 0.05 (0.425) 1.3 0.1 2.0 0.1 54 (0.65) (0.65) 0.2 0.1 0.12 +0.05 ?0.02 5? 10?
xp01601 2 sjj00151bed ? tr2 electrical characteristics t a = 25 c 3 c ? tr1 note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. common characteristics chart p t ? t a 0 160 40 120 80 0 250 100 200 50 150 total power dissipation p t ( mw ) ambient temperature t a ( c ) parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 60 v collector-emitter voltage (base open) v ceo i c = ? 2 ma, i b = 0 ? 50 v emitter-base voltage (collector open) v ebo i e = ? 10 a, i c = 0 ? 7v collector-base cutoff current (emitter open) i cbo v cb = ? 20 v, i e = 0 ? 0.1 a collector-emitter cutoff current (base open) i ceo v ce = ? 10 v, i b = 0 ? 100 a forward current transfer ratio h fe v ce = ? 10 v, i c = ? 2 ma 160 460 ? collector-emitter saturation voltage v ce(sat) i c = ? 100 ma, i b = ? 10 ma ? 0.3 ? 0.5 v transition frequency f t v cb = ? 10 v, i e = 1 ma, f = 200 mhz 80 mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz 2.7 pf (common base, input open circuited) parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 060v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 050v emitter-base voltage (collector open) v ebo i e = 10 a, i c = 07v collector-base cutoff current (emitter open) i cbo v cb = 20 v, i e = 0 0.1 a collector-emitter cutoff current (base open) i ceo v ce = 10 v, i b = 0 100 a forward current transfer ratio h fe v ce = 10 v, i c = 2 ma 160 460 ? collector-emitter saturation voltage v ce(sat) i c = 1 00 ma, i b = 1 0 ma 0.1 0.3 v transition frequency f t v cb = 10 v, i e = ? 2 ma, f = 200 mhz 150 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 3.5 pf (common base, input open circuited) note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
xp01601 3 sjj00151bed characteristics charts of tr1 i c ? v ce i c ? i b i b ? v be i c ? v be v ce(sat) ? i c h fe ? i c f t ? i e c ob ? v cb nf ? i e 0 0 ? 4 ? 8 ? 12 ? 16 ? 60 ? 50 ? 40 ? 30 ? 20 ? 10 collector current i c ( ma ) collector-emitter voltage v ce ( v ) t a = 25 c i b = ? 300 a ? 250 a ? 200 a ? 150 a ? 100 a ? 50 a 0 0 ? 100 ? 200 ? 300 ? 400 ? 60 ? 50 ? 40 ? 30 ? 20 ? 10 base current i b ( a ) collector current i c ( ma ) v ce = ? 5 v t a = 25 c 0 0 ? 0.4 ? 0.8 ? 1.2 ? 1.6 ? 400 ? 350 ? 300 ? 250 ? 200 ? 150 ? 100 ? 50 base-emitter voltage v be ( v ) base current i b ( a ) v ce = ? 5 v t a = 25 c 0 0 ? 2.0 ? 1.6 ? 1.2 ? 0.8 ? 0.4 ? 240 ? 200 ? 160 ? 120 ? 80 ? 40 base-emitter voltage v be ( v ) collector current i c ( ma ) v ce = ? 5 v t a = 75 c ? 25 c 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) ? 10 ? 3 ? 1 ? 10 ? 2 ? 10 ? 1 ? 1 ? 10 ? 10 ? 10 2 ? 10 3 i c / i b = 10 t a = 75 c 25 c ? 25 c 0 600 500 400 300 200 100 forward current transfer ratio h fe collector current i c ( ma ) ? 1 ? 10 ? 10 2 ? 10 3 v ce = ? 10 v t a = 75 c 25 c ? 25 c 0 40 80 120 160 140 100 60 20 transition frequency f t ( mhz ) emitter current i e (ma) 10 ? 1 11010 2 v cb = ? 10 v t a = 25 c 0 8 7 6 5 4 3 2 1 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb ( v ) ? 1 ? 10 ? 10 2 f = 1 mhz i e = 0 t a = 25 c 0 6 5 4 3 2 1 noise figure nf ( db ) emitter current i e (ma) 10 ? 2 10 ? 1 110 v cb = ? 5 v f = 1 khz r g = 2 k ? t a = 25 c
xp01601 4 sjj00151bed characteristics charts of tr2 nf ? i e h parameter ? i e h parameter ? v ce i c ? v ce i c ? i b i b ? v be i c ? v be v ce(sat) ? i c h fe ? i c 0 20 2 18 4 6 8 10 12 14 16 noise figure nf ( db ) emitter current i e (ma) 10 ? 1 110 v cb = ? 5 v r g = 50 k ? t a = 25 c f = 100 hz 10 khz 1 khz h parameter emitter current i e (ma) 1 10 ? 1 10 10 2 110 v ce = ? 5 v f = 270 hz t a = 25 c h fe h oe ( s) h ie (k ? ) h re ( 10 ? 4 ) h parameter collector-emitter voltage v ce ( v ) 1 ? 10 ? 1 10 10 2 ? 1 ? 10 i e = 2 ma f = 270 hz t a = 25 c h fe h oe ( s) h ie (k ? ) h re ( 10 ? 4 ) 0 010 24 8 6 60 50 40 30 20 10 collector current i c ( ma ) collector-emitter voltage v ce ( v ) t a = 25 c i b = 160 a 140 a 120 a 100 a 80 a 60 a 40 a 20 a 0 01 000 800 600 400 200 240 200 160 120 80 40 base current i b ( a ) collector current i c ( ma ) v ce = 10 v t a = 25 c 0 0 1.0 0.8 0.6 0.4 0.2 1 200 1 000 800 600 400 200 base-emitter voltage v be ( v ) base current i b ( a ) v ce = 10 v t a = 25 c 0 0 2.0 1.6 1.2 0.8 0.4 240 200 160 120 80 40 base-emitter voltage v be ( v ) collector current i c ( ma ) v ce = 10 v t a = 75 c ? 25 c 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 10 ? 2 10 ? 1 10 ? 1 1 10 10 2 11010 2 i c / i b = 10 t a = 75 c 25 c ? 25 c 0 600 500 400 300 200 100 forward current transfer ratio h fe collector current i c ( ma ) 10 ? 1 11010 2 v ce = 10 v t a = 75 c 25 c ? 25 c
xp01601 5 sjj00151bed f t ? i e nv ? i c 0 300 240 180 120 60 transition frequency f t ( mhz ) emitter current i e (ma) ? 10 ? 1 ? 1 ? 10 ? 10 2 v cb = 10 v t a = 25 c 0 240 200 160 120 80 40 noise voltage nv ( mv ) collector current i c ( a ) 10 10 2 10 3 v ce = 10 v g v = 80 db function = flat t a = 25 c 4.7 k ? r g = 100 k ? 22 k ?
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